MOCVD is in the III group and the II group elements and organic compounds V, VI element hydride as crystal growth source material on a substrate by vapor phase epitaxy on thermal decomposition reaction, thin single crystal material growth -V III, II-VI compound semiconductor and their multicomponent solid solution. Usually the crystal growth in the MOCVD system is in normal pressure or low pressure (10-100Torr) through the wall of quartz H2 (stainless steel) of the reaction chamber, the substrate temperature of 500-1200, RF induction heating graphite base (in graphite substrate above the base), H2 liquid source temperature can be controlled by drum microbubbles metal organic growth zone.